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32 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF032B
Data Sheet
High-Speed-Read (80 MHz)
The High-Speed-Read instruction supporting up to 80 MHz Read is initiated by executing an 8-bit com-
mand, 0BH, followed by address bits [A 23 -A 0 ] and a dummy byte. CE# must remain active low for the
duration of the High-Speed-Read cycle. See Figure 6 for the High-Speed-Read sequence.
Following a dummy cycle, the High-Speed-Read instruction outputs the data starting from the specified
address location. The data output stream is continuous through all addresses until terminated by a low to
high transition on CE#. The internal address pointer will automatically increment until the highest memory
address is reached. Once the highest memory address is reached, the address pointer will automatically
increment to the beginning (wrap-around) of the address space. For example, once the data from address
location 3FFFFFH has been read, the next output will be from address location 000000H.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
71 72
78
SCK
MODE 0
SI
0B
ADD.
ADD.
ADD.
X
SO
HIGH IMPEDANCE
N
D OUT
N+1
D OUT
N+2
D OUT
N+3
D OUT
N+4
D OUT
MSB
1327 F07.1
Figure 6: High-Speed-Read Sequence
Byte-Program
The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected
byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction
applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain
active low for the duration of the Byte-Program instruction. The Byte-Program instruction is initiated by
executing an 8-bit command, 02H, followed by address bits [A 23 -A 0 ]. Following the address, the data is
input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status register or wait T BP for the completion of
the internal self-timed Byte-Program operation. See Figure 7 for the Byte-Program sequence.
CE#
MODE 3
0 1 2 3 4 5
6 7 8
15 16
23 24
31 32
39
SCK
MODE 0
SI
02
ADD.
ADD.
ADD.
D IN
MSB LSB
SO
HIGH IMPEDANCE
1327 F08.0
Figure 7: Byte-Program Sequence
?2011 Silicon Storage Technology, Inc.
11
DS25071A
12/11
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SST25VF032B-80-4I-QAE 功能描述:闪存 32M (4Mx8) 80MHz Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF032B-80-4I-QAE_ 制造商:Microchip Technology Inc 功能描述:
SST25VF032B-80-4I-QAE-T 功能描述:闪存 2.7V to 3.6V 32Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF032B-80-4I-S2AF 功能描述:闪存 32M (4Mx8) 80MHz Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel